Abstract:Optical and electrochemical characterizations of electroplated films of bismuth telluride compounds. This work concerns the characterization of electroplated films of bismuth telluride (-0. 2x0. 2) which is a semiconductor compound with narrow band-gap generally used for thermoelectric applications. Transport parameters were determined using Spectroscopic Ellipsometry, Electrochemical Impedance Spectroscopy (Mott-Schottky plot) and additional measurements (Hall & Seebeck effects) which required to optimize the synthesis conditions to improve surface quality of electroplated layers. Mueller Matrix analysis showed the optically isotropic behavior. The dielectric functions of the films were determined in the energy range of 0. 03 to 3. 10 eV. In the infrared range, Tauc–Lorentz combined with Drude dispersion relations were successfully used. The energy band gap Eg was found to be about 0. 11 eV independent of x. This analysis was successfully extended to Bi2(Te0. 9Se0. 1)3 films. All results showed that the films are described as n-type semiconductor independently of x. Carrier concentration of the order of 1020 cm-3, resistivity of 15-50 . M and mobility of 4-14 cm2/(V. S) were explained by polycrystalline material features. An original experimental setup was carried out including simultaneously electrochemical quartz crystal microbalance data, electrochemical data and real time ellipsometer analysis in the visible range. The electrochemical system was found to be fully reversible and the apparent volumic mass of the film is equal to 7. 34 g/cm3. The analysis of the layer growth revealed a first period around 30 seconds where the gold substrate is progressively covered by the crystallites of Bi2Te3. A minimum of 35 nm-thick film is necessary to obtain morphological and optical characteristics quite similar to thick samples.

Electrochemically Deposited Thermoelectric Bismuth-Telluride Films

Thermoelectric Properties of Bismuth Telluride Thin Films Electrodeposited from a Nonaqueous Solution

Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems

Preparation and Characterization of Electrodeposited Cu<sub>x</sub>Bi<sub>2</sub>Te<sub>3</sub> Thermoelectric Films

Caractérisations optiques et électrochimiques de films electrodéposés de type Bi2Te3

Temperature and Size Effects on Electrical Properties and Thermoelectric Power of Bismuth Telluride Thin Films Deposited by Co-Sputtering

The Effect of Heat Treatment on Electrodeposited Bi2te3 Thin Films for Thermoelectric Applications

Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

Fabrication And Characterization Of Bismuth Telluride Thin Films By Thermal Evaporation Technique

Additive-aided Electrochemical Deposition of Bismuth Telluride in a Basic Electrolyte

Effect of Deposition Power on the Thermoelectric Performance of Bismuth Telluride Prepared by RF Sputtering

Preparation of Bismuth Telluride Compound Semiconductors Through Thin Film Reactions

Thermoelectric properties of BiSbTe alloy nanofilms produced by DC sputtering: experiments and modeling

Electrodeposition of Bi-Te Thin Films on Silicon Wafer and Micro-Column Arrays on Microporous Glass Template

Deposition and Fabrication of Sputtered Bismuth Telluride and Antimony Telluride for Microscale Thermoelectric Energy Harvesters

Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

Electrodeposition and thermoelectric characterization of (00L)-oriented Bi2Te3 thin films on silicon with seed layer

Effect of Doping and Annealing on Thermoelectric Properties of Bismuth Telluride Thin Films

Preparation and Thermoelectric Properties of Nano-Bismuth Telluride Film by High-Temperature Thermal Shock

Composition-dependent characterization and optimal control of electrodeposited Bi2Te3 films for thermoelectric application

Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers