Preparation and Thermoelectric Properties of Nano-Bismuth Telluride Film by High-Temperature Thermal Shock

Wen Shu Zhao,Geng Yuan Liang,Bo Wen Lei,Yong Lv He,Suli Xing,Ying Xiao,Jian Wei Zhang
DOI: https://doi.org/10.4028/p-fhus9i
2022-10-14
Materials Science Forum
Abstract:Publication date: 13 October 2022 Source: Materials Science Forum Vol. 1070 Author(s): Wen Shu Zhao, Geng Yuan Liang, Bo Wen Lei, Yong Lv He, Suli Xing, Ying Xiao, Jian Wei Zhang Thermoelectric materials can directly convert thermal energy into electrical energy, realizing the recovery of waste heat. Bismuth Telluride (Bi-Te) is considered as a perfect candidate thermoelectric material which has great potential in the field of refrigeration and temperature sensor. However, in the field of intelligent wearable devices and integrated circuits, traditional Bi-Te block material is difficult to be directly used due to its poor flexibility. In this paper, a series of Bi-Te thin films were prepared by a self-designed high-temperature thermal shock equipment. This equipment can heat up the reduced graphene oxide strip to 1750 K in 20 ms, which features both high heating rate (8.2 × 104 K/s) and cooling rate (1.5 × 104 K/s). Thermoelectric films on different substrates were prepared via high-temperature thermal shock. Through regulating the temperature of evaporation source, the particle size and composition of Bi-Te thin films can be precisely modulated, thus optimizing the Seebeck coefficient of the films. The Seebeck coefficient of copper foil (Cuf)-based Bi-Te film can reach 345.41 μV/K, which was prepared by thermal-shocking the Bi-Te powders for 30 s at 900°C.
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