The Effect of Heat Treatment on Electrodeposited Bi2te3 Thin Films for Thermoelectric Applications

Wen-Lin Wang,Chi-Chao Wan,Yan-Yang,Chao-Ho Lan
DOI: https://doi.org/10.1149/1.3641466
2011-01-01
ECS Transactions
Abstract:The simplest compound semiconductor for thermoelectric refrigeration at room temperature is bismuth telluride (Bi2Te3), with space group . Among all the synthesized methods of this compound, electrochemical deposition is a common and convenient technique to grow polycrystalline Bi2Te3 thin film. In this report, the effect of heat treatment on the thermoelectric properties and electrical characteristics of electrodeposited Bi2Te3 films was studied. Different film compositions from 58.9 at.%Te to 62.9 at.%Te were controlled by the diffusion-controlled method through a rotating electrode. With film composition as parameter, the deposited films with and without heat treatment were characterized by X-ray diffraction, scanning electron microscopy, and Hall effect measurements. The results showed that the Seebeck coefficient has been increased because of the heat treatment The maximum value of 120.9 μV/K occurred at 58.9%Te and then decreased to both Bi-rich and Te-rich sides. However, the diffraction pattern, the morphology, and the grain size did not change significantly by post-deposited annealing. Finally, the overall power factor was improved by a factor of 2 due to post-deposited annealing.
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