Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Suppression of Gallium Inhomogeneity in Zno Nanostructures on Gan Using Seed Layers

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Spontaneous Ga Incorporation in Zno Nanowires Epitaxially Grown on Gan Substrate

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

The Influence of Zno Seed Layers on N-Zno Nanostructure/P-Gan Leds

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Effect of seed layer on structure and luminescence properties of ZnS nanostructures

In Situ Site-Speci fi c Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar ( 11 2̅ 2 ) GaN

From Gan to Znga2o4 Through A Low-Temperature Process: Nanotube and Heterostructure Arrays

Zn-dopant dependent defect evolution in GaN nanowires

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Role of Gallium Wetting Layer in High-Quality Zno Growth on Sapphire(0001) Substrates

Synthesis and Optical Properties of Gan/Zno Solid Solution Nanocrystals

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga 2 O 3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Low-temperature Heteroepitaxy of Morphology-controlled ZnO Mirco/Nanorod Arrays on GaN Substrates

Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation