Abstract:With the development of ultra-large scale integrated circuits, ruthenium has been used as one of the most promising barrier materials for copper interconnects by replacing the conventional Ta/TaN bilayer film. However, during the polishing process of Ru/Cu structure using KIO4 slurries, the galvanic corrosion of copper could happen due to the large difference of the corrosion potentials between ruthenium and copper. This paper investigates the galvanic corrosion of copper of the Ru/Cu galvanic couple in KIO4-based slurries. The results reveal that, in KIO4 slurries without the addition of effective inhibitors, the galvanic corrosion of copper can greatly accelerate the oxidation and the corrosion of copper, and as a result, more reaction products, such as Cu(IO4)2/Cu(IO3)2 and CuO, can be rapidly formed on the copper surface, by which the material removal rate (MRR) of copper increases and the defects of copper could be aggravated. According to the theory of galvanic corrosion, two types of methods for controlling the galvanic corrosion of copper are proposed, i.e. the 1st one is using other oxidizer instead and the 2nd one is adding appropriate inhibitors. For the 1st method, KIO3 is used for demonstration and the effectiveness is verified. For the 2nd method, the combination of benzotriazole (BTA) and a non-ionic surfactant is tested. With the addition of BTA and the non-ionic surfactant, the theoretical galvanic current density decreases by one order of magnitude, and the MRR of copper slightly decreases after copper is connected to ruthenium to form a Ru/Cu galvanic couple. The passivation mechanism of BTA and the non-ionic surfactant on the copper surface can be proposed as follows: firstly the added BTA can form hydrophobic Cu-BTA complex on the copper surface; then the hydrophobic polypropylene oxide segments of the non-ionic surfactant can be effectively absorbed on the hydrophobic Cu-BTA complex as a supplement. These two parts are integrated as a complete passivating film on the copper surface to protect it from corrosion and excessive mechanical abrasion.

Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (Kio4)-Based Slurry

Investigation on Inhibition of Ruthenium Corrosion by Glycine in Alkaline Sodium Hypochlorite Based Solution

Corrosion Investigations of Ruthenium in Potassium Periodate Solutions Relevant for Chemical Mechanical Polishing

Inhibition Effect of Glycine on Molybdenum Corrosion During CMP in Alkaline H2O2 Based Abrasive Free Slurry

Investigation on the Galvanic Corrosion of Copper During Chemical Mechanical Polishing of Ruthenium Barrier Layer

The effect of glycine and benzotriazole on corrosion and polishing properties of cobalt in acid slurry

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Effect of Potassium Ferrocyanide on CMP Performance of Ruthenium in H 2 O 2 -based Slurries

Effect of Guanidine Sulfate on the CMP of Ru in H2O2 Based Slurry

Effects of KIO 4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium

Synergetic effect of H 2 O 2 and glycine on cobalt CMP in weakly alkaline slurry

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Surface Characteristics of Ruthenium in Periodate-Based Slurry During Chemical Mechanical Polishing

Effect of ethylenediamine on CMP performance of ruthenium in H2O2-based slurries

Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO 4 -based slurries

Study of inhibition mechanism of glycine on the electrochemical behavior of Mo in the alkaline slurry

Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper

Chemical Mechanical Polishing of Copper in Glycine-H2O2 System Slurry

Performance of Sodium Dodecyl Sulfate in Slurry with Glycine and Hydrogen Peroxide for Copper-Chemical Mechanical Polishing

Potassium persulfate as an effective oxidizer for chemical mechanical polishing of GCr15 bearing steel

Effect of glycine on CMP process of molybdenum