Energy efficient 5 Gb/s baseband transceiver for 3D memory interconnect

Alzahmi, Ahmed
DOI: https://doi.org/10.1007/s11042-024-19988-x
IF: 2.577
2024-08-31
Multimedia Tools and Applications
Abstract:Three-dimensional (3D) memory integration presents challenges in achieving high data rates while maintaining low power consumption and signal integrity. This article introduces an energy-efficient I/O Baseband (BB) transceiver architecture designed to address these challenges. The proposed architecture utilizes high-speed drivers and through-silicon vias (TSVs) to establish short, vertical interconnects between transmitter (TX, tier 1) and receiver (RX, tier 2). A low-dropout voltage regulator (LDO) is integrated to enhance signal integrity by minimizing supply noises. The design is simulated using a 3D EM solver tool, HFSS, to model and optimize TSV channels with S-parameters. Implemented in 130 nm CMOS technology, the compact TX and RX occupy a layout area of 0.18 mm 2 . Simulation results demonstrate a robust performance with a data rate of 5.8 Gb/s at a low 1.1-V supply voltage, consuming only 4.62 mW of power. This work contributes a novel approach to efficient 3D memory interconnects, emphasizing high performance and energy efficiency for next-generation mobile memory interfaces.
computer science, information systems, theory & methods,engineering, electrical & electronic, software engineering
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