Edge-based near-field photolithography optical proximity effect correction technique
Jiaxin Ji,Bin Wei,Guangjuan Wen,Zhongwen Lin
DOI: https://doi.org/10.1007/s11082-024-07765-x
IF: 3
2024-11-04
Optical and Quantum Electronics
Abstract:Near-field photolithography can use surface plasmon polaritons to surpass the traditional optical diffraction limit, thus removing the limitation imposed by the light source wavelength on traditional photolithography resolution. However, the optical proximity effect causes uneven patterns produced by near-field photolithography, resulting in significant deviations from the target pattern. This work employs edge-based near-field photolithography optical proximity effect correction technology to optimize mask patterns to resolve the issue of imaging distortion in near-field photolithography. Firstly, a near-field photolithography exposure model is established in Ansys-FDTD software, and based on this model, the optical proximity effect is analyzed using transfer matrix theory and distribution of electric field energy. Secondly, the designed mask pattern is fed into the exposure model to obtain the exposed pattern outline. Therefore, an edge-based compensation rule is proposed to optimize the pattern based on the trend of contour errors. Finally, the mask with the optimized pattern is prepared using near-field imaging photolithography for comparison experiments. According to the experimental results, the optimized mask improves the similarity of photolithography patterns by 34.7% and reduces the average corner error rate by 61.7%. Thus, the optimized imaging mask significantly reduces distortion in photolithography patterns.
engineering, electrical & electronic,optics,quantum science & technology