Research on Simulation of Proximity Lithography by Angular Spectrum Method

LI Xiao-guang,SHEN Lian-guan,ZHENG Jin-jin,LI Mu-jun,CHEN You-mei
2007-01-01
Abstract:During fabrication of the micro-structures with high aspect ratio by UV-LIGA,the diffraction effect in the process of proximity lithography can produce the graphic distortion when the mask pattern is transferred.As a result,some defects appear in the photo-resist.Simulation of the diffraction can estimate the error of the lithography pattern and provide a theoretical foundation for correction of the error.The fast Fourier transform(FFT) algorithm was employed to study the angular spectrum of the proximity lithography,the principle of selection and determining the parameters related to FFT,and the influences of the lumination system of photoetching machine on the selection of the parameters were discussed.The simulation results of the surface and interior of photo-resist indicate that a high precision and calculation speed can be obtained by the FFT method.Comparing with Rayleigh-Sommerfeld diffraction integral simulation method,there was a little difference of the precisions obtained by the FFT method,but the calculation of the FFT method was faster several tens times than that of Rayleigh-Sommerfeld diffraction integral simulation method,indicating that the microstructure patterns are pre-corrected by the FFT method at the design stage of the mask patterns to get ideal photo-resist graphics.
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