Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

On the Origin of Blue Emission from As-Doped Gan

Strong blue emission from GaN isoelectronically doped with arsenic

On the origin of Blue Luminescence in Mg doped GaN

X-ray Studies of As-doped GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Optical Properties of Mg-implanted GaN

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Near-Field Spectroscopy Of Gan Blue Light Emission Diode

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Temperature‐dependent Cathodoluminescence Investigation of Er‐implanted GaN Thin Films

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Oxygen-doped colloidal GaN quantum dots with blue emission

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Luminescence property of GaN films with change of thickness

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Gaas Film Deposited on Srtio3 Substrate by Molecular Beam Epitaxy

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Optical Study Of Bandedge Blue-Shift In Algan/Gan Double Quantum Wells