Abstract:Recently, there has been an increasing interest in ZnO due to its electrical, optical and piezoele-ctric properties making suitable for many applications such as light emitting diodes, photodetectors, surface acoustic waves device and so on. SAW filters with working frequency higher than 1 GHz will be widely applied in the intending wireless communication, whereas higher resonant frequencies (superior to 2.5 GHz) tend to push the limits of conventional photolithography. ZnO/diamond structure as SAW substrates offers an attractive means for relaxation of the lithographic criteria since ZnO has excellent piezoelectricity while diamond has the highest elastic and stiff coefficient and highest sound velocity. The use of ZnO based on diamond as SAW substrates offers an attractive means for relaxation of the lithographic criteria since diamond has the highest stiff coefficient and sound velocity. SAW devices have been reported based on ZnO/diamond/Si layered structures with a diamond layer of 10~100 μm deposited by chemical vapor deposition (CVD) technique. However the silicon substrate restricts the heat dissipation performance of the diamond films. In regard of actual applications, a ZnO/diamond layered structure without a silicon substrate can make full use of the outstanding thermal, elastic, and sound velocity characteristics of diamond while avoiding restriction of heat dispassion due to additional silicon substrates. High quality ZnO films are currently the foundation of device preparation and the variation of deposition technological parameters is an important factor to obtain ZnO films with high quality.In this paper, ZnO thin films have been prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by reactive radio-frequency magnetron sputtering. With the variation of O2/Ar, the growth and optical properties of the ZnO films are characterized experimentally by X-ray diffraction, room temperature photoluminescence spectra, and electron probe microanalysis and Hall measurements. The results indicate that the ZnO film deposited with a O2/Ar ratio of 1 is of c-preferred orientation and high resistivity and has the best optical property.

Research Progress in Piezoelectric Thin Films on Diamond Substrates

Development and Progress in Piezotronics

THE RESEARCH PROGRESS OF LINBO3PIEZOELECTRIC THIN FILMS

Research Progress in Thin Film Surface Acoustic Wave Devices

Deposition of High-Quality Zinc Oxide Thin Films on Diamond Substrates for High-Frequency Surface Acoustic Wave Filter Applications

Surface acoustic wave characteristics on an AlN/LiNbO_3/diamond layered structure

Integration of diamond-like carbon and AlN for acoustic wave devices

Influence of a Piezoelectric ZnO Intermediate Layer on Rayleigh Waves Propagating in Sc 43% AlN 57% /zno/diamond Hetero-Structures Subjected to Uniaxial Stress

Theoretical study on design of ZnO piezoelectric thin film sensors

Advances in Piezoelectric Thin Films for Acoustic Biosensors, Acoustofluidics and Lab-on-chip Applications

Progress in Research on LiNbO3 Thin Films

On the recent progress of piezoelectric composites

Investigation of High-Quality ZnO Film on Polycrystalline Diamond Wafer for Fabrication of High Frequency SAW Filter

Research Progress of Piezoelectric Composites for Ultrasound and Underwater Transducers

Study of piezo-induced surface vibration in solids using atomic force probe

Research progress of optoelectronic devices based on diamond materials

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

Theoretical Investigation of Acoustic Wave Devices Based on Different Piezoelectric Films Deposited on Silicon Carbide

Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices: Materials, Processing, and Applications

The Growth and Optical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films

Propagation of leaky surface acoustic waves in a layered piezoelectric semiconductor structure