Abstract:The facet-dependent electrical conductivity properties of silicon wafers result from significant band structure differences and variations in bond length, bond geometry, and frontier orbital electron distribution between the metal-like and semiconducting planes of silicon. To further understand the emergence of conductivity facet effects, electrochemical impedance measurements were conducted on intrinsic Si {100}, {110}, and {111} wafers. The attempt-to-escape frequency, obtained from temperature-dependent capacitance versus applied frequency curves, and other parameters derived from typical semiconductor property measurements were used to construct a diagram of the trap energy level (Et) and the amount of trap states Nt(Et). The trap states are located 0.61-0.72 eV above the silicon conduction band. Compared to {100} and {110} wafers, Si {111} wafer shows far less densities of trap states over the range of -0.2 to 2 V. Since these trap states inhibit direct electron excitation to the conduction band, the {111} wafer having much fewer trap states presents the best electrical conductivity property. Impedance data also provide facet-specific carrier lifetimes. The {111} surface gives consistently the lowest carrier lifetime, which reflects its high electrical conductivity. Lastly, ultraviolet photoelectron spectra and diffuse reflectance spectra were taken to obtain Schottky barriers between Ag and contacting Si wafers. The most conductive {111} surface presenting the largest Schottky barrier means the degrees of surface band bending used to explain facet-dependent electrical behaviors cannot be reliably attained this way.

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Interfacial protection of topological surface states in ultrathin Sb films.

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Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

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Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Influence of strain on the conduction band structure of strained silicon nanomembranes

Facet-Dependent Surface Trap States and Carrier Lifetimes of Silicon

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Electronic states and curved surface effect of silicon quantum dots

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

Quantum Transport of the 2D Surface State in a Nonsymmorphic Semimetal

Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

Bonding properties of amorphous silicon and quantum confinement in the mixed phases of silicon nano slabs

Quantum Confinement Effect In Silicon Carbide Nanostructures: A First Principles Study

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Confinement of electrons in size modulated silicon nanowires