Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations
Binghai Yan,Kota Tomatsu,Bing Huang,Andreia Luisa da Rosa,Gang Zhou,Bing-Lin Gu,Wenhui Duan,Fumio Komori,Thomas Frauenheim
DOI: https://doi.org/10.1103/physrevb.79.235437
2009-01-01
Abstract:Using first-principles methods we studied structural and electronic properties of asymmetric heterogeneous $X\text{-Si}$ ($X=\text{Ge}$, Sn, and Pb) dimers on the Si(001) surface and their scatterings for the quasi-one-dimensional ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons. The $X\text{-Si}$ dimer with impurity atom $X$ at the lower position scatters more strongly the ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons than that with $X$ at the upper position. Calculated scattering potentials can be qualitatively explained by the difference in $p$-orbital energy between Si and the lower atom of the $X\text{-Si}$ dimer. We predict that the amplitude of electronic standing waves changes significantly between the two oppositely buckled $X\text{-Si}$ dimers in differential conductance images of scanning tunneling microscopy. This suggests the possibility of fabricating atomic switches to control the conduction of ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons along the dimer row. Our proposed atomic switches could be achieved by flipping the impurity dimers on the Si(001) surface using the method developed in recent experiments [K. Sagisaka et al., Phys. Rev. Lett. 91, 146103 (2003)]. Finally, we proposed the model for dimer-flipping mechanism, which can explain previous experiment [K. Sagisaka and D. Fujita, Phys. Rev. B 71, 245319 (2005)].