Abstract:Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for p-type semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the well-known intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7-didodecyl[1]benzothieno [3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility ( $mu _{FET}$ ) of 3.5 cm2V−1 s−1, subthreshold-swing (SS) of 110 mV decade−1, on-off ratio of 104, and widely-tunable threshold voltage ( ${V} _{t}$ ) are realized at a low voltage below 2 V in the open air.

1-Imino Nitroxide Pyrene for High Performance Organic Field-Effect Transistors with Low Operating Voltage

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors.

High-Performance Ultra-Low-Power OFET Based on Anodized TiOx Dielectric and Solution-sheared Organic Single Crystal

High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

A Low Temperature Solution-Processed Ormosil Film for Low-Voltage Organic Field-Effect Transistors

Fused-ring pyrazine derivatives for n-type field-effect transistors.

Ultralow contact resistance in organic transistors via orbital hybridization

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

High-Performance Low-Cost Organic Field-Effect Transistors With Chemically Modified Bottom Electrodes

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

High-performance and multifunctional organic field-effect transistors

Low Temperature, Solution-Processed Ambipolar Field-Effect Transistors Based on Polymer/self-Assembled Monolayer Modified InOx Hybrid Structures for Balanced Hole and Electron Mobilities Exceeding 1 Cm2 V−1 S−1

Inkjet-Printed Organic Electrodes for Bottom-Contact Organic Field-Effect Transistors

Diketopyrrolopyrrole Based Organic Semiconductor Materials for Field-Effect Transistors

Dopant/Semiconductor/Electret Trilayer Architecture for High‐Performance Organic Field‐Effect Transistors

High-performance Air-Stable Organic Field-Effect Transistors: Isoindigo-Based Conjugated Polymers.

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

High-performance $n$-type organic field-effect transistors with ionic liquid gates

Enhanced Performance of Organic Field-Effect Transistors by a Molecular Dopant with High Electron Affinity.