Abstract:Co-doped ZnO (Zn0.95Co0.05O) rods are fabricated by co-precipitation method at different temperatures and atmospheres. X-ray diffraction, Energy dispersive X-ray spectroscopy and Raman results indicate that the samples were crystalline with wurtzite structure and no metallic Co or other secondary phases were found. Raman results indicate that the Co-doped ZnO powders annealed at different temperatures have different oxygen vacancy concentrations. The oxygen vacancies play an important role in the magnetic origin for diluted magnetic semiconductors. At low oxygen vacancy concentration, room temperature ferromagnetism is presented in Co-doped ZnO rods, and the ferromagnetism increases with the increment of oxygen vacancy concentration. But at very high oxygen vacancy concentration, large paramagnetic or antiferromagnetic effects are observed in Co-doped ZnO rods due to the ferromagnetic-antiferromagnetic competition. In addition, the sample annealed in Ar gas has better magnetic properties than that annealed in air, which indicates that O-2 plays an important role. Therefore, the ferromagnetism is affected by the amounts of structural defects, which depend sensitively on atmosphere and annealing temperature. (c) 2011 Elsevier B.V. All rights reserved.

Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films

Investigation of Annealing-Induced Oxygen Vacancies in the Co-doped ZnO System by CoK-edge XANES Spectroscopy

Evidence of Oxygen Vacancy Mediated Room-Temperature-Ferromagnetism in Co-Doped Zno Films Upon Hydrogen Treatment

Determination Of The Role Of O Vacancy In Co:Zno Magnetic Film

Enhancement of ferromagnetism of ZnO:Co nanocrystals by post-annealing treatment: The role of oxygen interstitials and zinc vacancies

Preparation of One-Dimensional Diluted Magnetic Semiconducting Cr0.046zn0.954o and Properties Tuning with H-2 Atmospheric Annealing

Structural, optical and magnetic properties of Co-doped ZnO films

Effect Of Oxygen Deficiency On Room Temperature Ferromagnetism In Co Doped Zno

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Properties of Zn1-xCoxO thin films grown on silicon substrates prepared by pulsed laser deposition

Effects Of Temperature And Atmosphere On The Magnetic Properties Of Co-Doped Zno Rods

Intrinsic and Spatially Nonuniform Ferromagnetism in Co-doped ZnO Films

Effect of Oxygen Vacancy Defect on the Magnetic Properties of Co-Doped Zno Diluted Magnetic Semiconductor

Substrate-Dependent Magnetization In Co-Doped Zno Insulating Films

Oxygen Vacancies Mediated Ferromagnetism in Hydrogenated Zn0.9Co0.1O Film

The Role Of Zn Interstitials In Cobalt-Doped Zno Diluted Magnetic Semiconductors

Oxygen Enhanced Ferromagnetism in Cr-doped ZnO Films

Optimizing physical properties of Co-doped ZnO nanoparticles: Controlling oxygen vacancy and carrier concentration

First-principles Study of the Effect of Vacancies on Magnetic Properties of Zn1 −xcoxo Thin Films