Structural Characteristics of Gd A-Si(s,o):H Films

GR HAN,ZH JIANG,ZH DING

DOI: https://doi.org/10.1016/0022-3093(88)90294-3

IF: 4.458

1988-01-01

Journal of Non-Crystalline Solids

Abstract:The local structure of a-Si(S,O):H films has been characterized by IR, XPS, ESR, and hydrogen evolution method with gas chromatographic analysis. Based on the results, a structural model may be presented.

What problem does this paper attempt to address?

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

L.-N. He,D.-M. Wang,S. Hasegawa

DOI: https://doi.org/10.1016/S0022-3093(99)00616-X

IF: 4.458

2000-01-01

Journal of Non-Crystalline Solids

Abstract:The Si–O stretching mode in amorphous SiOx:H (a-SiOx:H) films, prepared by rf glow discharge decomposition of a SiH4–O2 mixture at 300°C, has been investigated by infrared absorption measurements as a function of the O content x. It was found that the ratio, IAS1/NSi, of the absorption intensity of the Si–O stretching mode centered around 1000 cm−1 to the density of Si atoms increased linearly with increasing x, up to x=0.6. Above x=0.6, the rate of increase of the IAS1/NSi values became slower. However, the ratio, Isum/NSi, of sum of the absorption intensities for both 1000 and 1150 cm−1 bands to the density of Si atoms increased linearly with increasing x for x>0.6. We obtained the proportionality coefficient, ASiO, of the Si–O stretching mode to be 1.48×1019 cm−2. The characteristic of the Si–O stretching mode and the ASiO are discussed.
Structure and Electronic States in A-Si:H Thin Films

Jian He,Wei Li,Rui Xu,Kang-Cheng Qi,Ya-Dong Jiang

DOI: https://doi.org/10.1007/s10853-012-6387-1

IF: 4.5

2012-01-01

Journal of Materials Science

Abstract:The hydrogenated amorphous silicon (a-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition at various substrate temperatures. This paper examined the relationship between structural evolution and electronic states of the tested thin films. Raman spectroscopy was used to evaluate the structural evolution in amorphous network. Meanwhile, Fourier transform infrared spectroscopy was applied to explore the change of hydrogen in thin films. Results show that the order of network on short and intermediate scales, the content and bonding mode of bonded hydrogen, as well as the intrinsic stress and silicon coordination defects, and closed rings in the thin films, vary with the deposition temperature. The dielectric spectra of samples were measured using SE850 spectra ellipsometer. The density of electronic band states (DOS) in both valence band and conduction band for a-Si:H thin films was obtained by fitting the measured dielectric spectra. The results, verified by optical measurement, reveal that the effect of hydrogenation on band edge DOS is predominant in comparison with that of network relaxation.
EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

YX Wang,Z Guo,HP He,Y Cao,HG Tang

DOI: https://doi.org/10.7498/aps.50.256

2001-01-01

Abstract:SiC films were prepared on Si(111) substrates by annealing polystyrene gel films at temperature 950℃ in vacuum(10-3 Pa).Fourier transform infrared spectroscopy(FTIR),X-ray diffraction(XRD), Transmission electron microscopy(TEM).Raman scattering and X-ray photoelectron spectroscopy(XPS) were used to study the morphology of the surface, crystal structure. composition and chemical state of the element of the SiC films. It revealed that the films consisted of preferentially oriented crystalline 6H-SiC epilayer which grew along(0001) planes parallel to Si(111) planes. The ratio of Si to C was about 1 and there were some carbon and oxide contaminant species in the form of CH, CO and Si2O3 along with a small amount of adsorptive oxide at the surface of the films. The polycrystalline grains in the films grew cylindrically along c axis.Their maximum size was about 150nm. The film was smooth. dense and uniform with a thickness of about 0.3 μm. It was found that covering the polystyrene film with a Si plate could increase the quantity of SiC during anncaling.
Structure Of Nc-Si : H Films

Gr Han,Xw Zhang,Gh Shi,Dk Shen,Wq Han,Py Du

2000-01-01

Abstract:Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a glow discharge plasma chemical vapor deposition system using heavy hydrogen diluted silane. The structural properties of the deposited films were evaluated by means of Raman spectrometer, high resolution electron microscopy and x-ray diffraction pattern. Effects of the gas flow ratio of SiH4/H-2 and RF power density on the crystallization and microstructure of nc-Si:H films are described. An interpretation of these results is suggested.
Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Han Gaorong,Oiao Jianmin,Du Piyi,Jiang Zhonghua,Ding Zishang

DOI: https://doi.org/10.1557/proc-219-593

1991-01-01

Abstract:We have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.
Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Zhe Li,Jun Zhang,Hai Yan He,JunCao Bian,Xiwen Zhang,Gaorong Han

DOI: https://doi.org/10.1002/pssa.201026318

2010-01-01

Abstract:The carbon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were deposited by plasma enhanced chemical vapor deposition using silane (diluted to 10% in hydrogen) and ethylene as the gas sources. To observe surface enhanced Raman scattering (SERS), some samples were prepared on sputtered Ag films on Si substrates. A variety of techniques including ellipsometer, Fourier transform infrared spectroscopy, Raman scattering, scanning electron microscope, and photoluminescence (PL) spectroscopy were used to characterize the grown films. With enormous enhancement in Raman spectral intensity of carbon related phases and Si-C bonds, SERS is proved to be a powerful method to investigate carbon-rich a-Si1-xCx:H films. Multiphase structure of the grown a-Si1-xCx:H films is confirmed which possesses hydrogenated sp(3) Si-C network and sp(2) amorphous carbon clusters. Blue-green multiband PL are observed at room temperature. A possible PL mechanism is suggested: the PL originates from exciton-like and geminate recombination of excited electron-hole pairs through localized tail states within sp(2) clusters and gap states related to sp(3) Si-C network. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field

O. A. Golikova,A. N. Kuznetsov,V. Kh. Kudoyarova,M. M. Kazanin

DOI: https://doi.org/10.1134/1.1187067

IF: 0.66

1997-07-01

Semiconductors

Abstract:Data on the hydrogen content and different forms of hydrogen bonds with silicon in a-Si:H films deposited by direct-current decomposition of silane in a magnetic field (MASD) as a function of the deposition conditions are presented: temperature, pressure of the mixture 25%SiH4+75%Ar, pumping rate, and insertion of a grid into the discharge chamber. The correlations between the photoconductivity and the structural features of the films are established.

physics, condensed matter
Optical and Structural Properties of Α-Si1-xcx Films

Chen Zhizhong,Yang Kai,Zhang Rong,Shi Hongtao,Zheng Youdou

DOI: https://doi.org/10.1557/proc-423-753

1996-01-01

MRS Proceedings

Abstract:In this paper, we reported experimental results about optical and structural properties of amorphous silicon carbide (α-Si1−xCx). The films of α-Si1−xCx were grown by CVD on substrate of quartz glass. Optical constants (n-refractive index, α-absorption coefficient, Eg-optical energy band gap) of these films were determined by transmission spectra. The radial distribution functions (RDFs) of α-Si1−xCx films were drawn out from the data of x-ray diffraction spectra. According to the RDFs, we imagined the statistic scene from which we could obtain the information of atomic radial distribution. The bond lengths and bond numbers of Si-Si, Si-C, and C-C could be also determined by RDFs. From the analysis of Raman spectra, we obtained the information of their vibration state density, and discerned the peaks of bond vibration, which agreed well with the results of a-Si1−xCx RDF.
Structural and Optoelectronic Properties of A-Si:H: A New Analysis Based on Spectroscopic Ellipsometry

Jian He,Anran Guo,Wei Li,Jiliang Mu,Xiaojuan Hou,Chenyang Xue,Xiujian Chou

DOI: https://doi.org/10.1016/j.vacuum.2017.04.013

IF: 4

2017-01-01

Vacuum

Abstract:Hydrogenated amorphous silicon (a-Si:H) thin film has important applications in optoelectronic devices. In this work, a new analytical method of spectroscopic ellipsometry has been proposed, which can be used to calculate the density of electronic states and the optoelectronic parameters in a-Si:H. Meanwhile, the material structures, the optoelectronic properties and the relationship between them have been analyzed. Results show that the variation in electronic structure is directly related to the thin film structure. The increase of disorder in amorphous network has a strong impact on the DOS in band tails, especially in the valence band tail. The main source of variation in the peak position of dielectric function and the optical gap is the content of bonded hydrogen in the thin film. Likewise, the decrease in the amplitude of dielectric function is due primarily to the reduction in effective valence electrons induced by density deficit. Moreover, the optical absorption exhibits a contrary trend in the energy region below and above similar to 1.7 eV. This is because the samples with higher deposition temperature have larger DOS in band tails and lower optical gap. (C) 2017 Elsevier Ltd. All rights reserved.
Properties of A-Si∶h Prepared by DBDCVD

Gaorong Han

2006-01-01

Abstract:a-Si∶H films were prepared on glass substrates by Dielectric Barrier Discharge Chemical Vapour Deposition(DBDCVD) at room temperature.A series of the samples were deposited by varying the deposition parameters such as the specific flux of SiH_4/H_2 and the discharge voltage of DBD.The results show that DBDCVD can be used to prepare a-Si∶H films with a high deposition rate up to 0.34 nm/s at room temperature.Because of the high energy of DBDCVD and the deposition at room temperature,SiH_2 is the main bonding configuration of the Si-H bonds in the films.With changing SiH_4 concentration,the band gap of the films can be adjusted between 1.92 eV and 2.18 eV.
Study of Properties of A-Si1-xgex:H Prepared by SAP-CVD Method

YM WANG,LH JING,DW PANG

DOI: https://doi.org/10.1117/12.24405

1991-01-01

Abstract:The Sputtering-Assisted Plasma (SAP)-Chemieal Vapour Deposition (CYD) method was used to prepare in a gas mixture of SIH4 + Ar + H2 a-Sii_Ge : H with different composition and optical gap between 0. 98 and 1. 85 eV. From experimental study of samples optimal processing conditions were obtained and a model of interactions between H and the growing surface was presented. Study of the properties of samples shew that hydrogenated a-Si Ge alloy prepared by SAP-CVD technique is superior in some respects with regard to optoelectronic effect and deterioration of the performance related with in-crease of Ge content.
Structural Evolution and Electronic Properties of N-Type Doped Hydrogenated Amorphous Silicon Thin Films

Jian He,Wei Li,Rui Xu,KangCheng Qi,YaDong Jiang

DOI: https://doi.org/10.1117/12.903747

2013-01-01

Science China Technological Sciences

Abstract:The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si: H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

YH Wang,J Lin,CHA Huan

DOI: https://doi.org/10.1016/s0921-5107(02)00204-0

2002-01-01

Abstract:The structural and optical properties of hydrogenated amorphous silicon carbon (a-Si1−xCx:H) thin films, grown from argon diluted silane, ethylene, and hydrogen mixture by plasma-enhanced chemical vapor deposition (PE-CVD) technique, were studied. Variable flow rates and other growth conditions were applied. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, Raman scattering (RS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HR-TEM), UV-VIS-NIR spectroscopy, and photoluminescence (PL) were used to characterize the grown materials. The results confirmed the multiphase structure of the grown a-Si1−xCx:H thin films: Si–C network, carbon-like and silicon-like clusters coexisting. The room temperature (RT) PL shows a different result from the previous reports. It is suggested that both graphite-like phase and a-Si:H-like phase are light-emitting grains. The two types of grains and Si–C network are the origin of the PL in hydrogenated amorphous silicon carbide material.
The Study of the Microstructures in Ar+ Laser Crystallized Asi:H Films for Active Layer of TFT

XF HUANG,XD ZHANG,WY ZHU,YY CHEN

DOI: https://doi.org/10.1117/12.47191

1991-01-01

Abstract:The structural and electrical properties of a-Si:H crystallized films obtained by the Ar+ laser scanning irradiation have been investigated by means of Raman scattering, X-ray diffraction, and conductivity-Hall measurement. For the liquid phase laser crystallized films (LP-LCR) the results show that the average grain size is about tens of micrometers and the preferential crystal orientation is in the direction of <111>. At room temperature the conductivity of crystallized films is 1.5 ((Omega) (DOT)cm)-1 and the Hall mobility of electrons is about 36 cm2/V(DOT)s.
Microstructural Studies of Noncrystalline Solid Silicon Films by To-Like Modes of Raman-Spectra

GX CHENG,KJ CHEN,W ZHANG,H XIA,XK ZHANG

DOI: https://doi.org/10.1002/pssa.2211290212

1992-01-01

Abstract:Several microstructural parameters can be obtained from the HWHM (half width at half maximum) GAMMA of the TO-like mode and the peak positions in the Raman spectra of non-crystalline silicon materials (including multilayer and single thick films). These are the rms bond angle variation DELTA-theta = (GAMMA - 7.5)/3 (deg) [1], the average distortion energy per bond (u) of the interface, and the stress near the interface (sigma), in a-Si:H layers. The grain size of the mu-c-Si films can be also obtained from DELTA-d approximately 2-pi(B/DELTA-omega(TO))1/2[2]. The distortion energy is given by U = 3K(r-DELTA-theta-BAR)2, where K and r are the force constant of Si (9.2 x 10(3) dyn/cm2) and the bond length of Si (2.4 x 10(-8) cm) [3], respectively. Sigma is equal to n x DELTA-U, n is the total number of distorted Si-Si bonds per unit area near the interface, and DELTA-U is the average excess distortion energy. The microstructural parameters of thick single mu-c-Si:B films and different composition-modulated superlattices are compared when the following quantities are changed: (1) d(s) (thickness of the a-Si:H layer), (2) R (the NH3/SiH4 ratio). The microstructures can well be understood after proper theoretical models are adopted, i.e., using the Peierls-Nabarro model, it can be explained that the stress near the interface is inversely proportional to the thickness of the a-Si:H layer (d(s)) within the range of a few monolayers. The Pantelides model can be used to explain the overcoordination of nitrogen in the a-Si:H layer near the interface.
Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Pan Zhi-Yun,Sun Zhi-Hu,Xie Zhi,Yan Wen-Sheng,Wei Shi-Qiang

DOI: https://doi.org/10.7498/aps.56.3344

2007-01-01

Abstract:The local structures around Ge atoms in the Si/Gen/Si(001) hetero-structure films (consisting of 1, 2, 4 and 8 monolayers) prepared by molecular beam epitaxy at 400℃ have been investigated by grazing incidence fluorescence X-ray absorption fine structure (XAFS). The results show that for the Si/Ge1/Si(001) or Si/Ge2/Si(001) hetero-structure film, the Ge atoms are dominantly surrounded by Si atoms as the nearest neighbor. For the Si/Ge4/Si(001) hetero-structure film, the coordination environment around Ge atoms is close to that of Si0.70Ge0.30 alloy. Even for the Si/Ge8/Si(001) hetero-structure film, the fraction of Ge-Ge coordination pair in the first shell is only 55%. This suggests that under the growth temperature of 400℃, the Ge atoms have a strong ability to migrate into the Si capping layer. With the thickness of Ge layer increasing from 1 to 2, 4 and 8ML, the amount of migrated Ge atoms increases from about 0.5 to 1.5, 2.0 and 3.0 nominal ML. We consider that the migration of Ge atoms during the growth of the Si cap is mainly attributed to the surface segregation of Ge atoms, which leads to the decrease in surface energy as well as strain energy in the Ge layer.
Structural properties of hydrogenated amorphous silicon carbide alloys

yan wang,ruifeng yue,litian liu

DOI: https://doi.org/10.1016/S0169-4332(02)00288-X

IF: 6.7

2002-01-01

Applied Surface Science

Abstract:The network disorder of a-Si1−xCx:H films containing carbon concentrations below 20at.% has been studied by means of Raman spectroscopy and photoluminescence (PL) measurements. Two different radiations were employed to excite these materials, one higher than the optical gap and strongly absorbed (488nm), the other near to the optical gap and weakly absorbed (647.1nm). When excited with strongly absorbed radiation, the frequency and width of TO mode have a large redshift and broadening relative to the weakly absorbed radiation, while the position and width of PL peak have a blueshift plus broadening. The variations in probed depth together with the significant differences observed in the Raman spectra and PL spectra indicate the existence of two types of inhomogeneities: a highly disordered thin layer near free surface and gap fluctuations due to spatial variations of compositions in the bulk. The above results indicate that Raman and PL characteristics at different radiations can be used to explore the spatial variations of materials.
Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Yiying Zhang,Piyi Du,Ran Zhang,Gaorong Han,Wenjian Weng

DOI: https://doi.org/10.1016/j.jnoncrysol.2006.11.047

IF: 4.458

2008-01-01

Journal of Non-Crystalline Solids

Abstract:a-Si1−xCx:H films are deposited by RF plasma enhanced chemical vapor deposition (PECVD) at different RF powers with hydrogen-diluted silane and methane mixture as reactive gases. The structure and properties of the thin films are measured by infrared spectroscope (IR), Raman scattering spectroscope and ultra violet–visible transmission spectroscope (UV–vis), respectively. Results show that the optical band gap of the a-Si1−xCx:H thin films increases with increasing Si–C bond fraction. It can be easily controlled through controlling Si–C bond formed by modulating deposition power. At low deposition power, the bond configuration of the a-Si1−xCx:H thin film is more disordered owing to the distinct different bond lengths and bond strengths between Si and C atoms. At a too high deposition power, it becomes still high disordered due to dangling bonds appearing in the a-Si1−xCx:H thin film. The low disordered bond configuration appears in the thin film deposited with moderate deposition power density of about 2.5W/cm2.
Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Yi Hua Wang,Jian Yi Lin,Zhe Chuan Feng,Soo Jin Chua,Cheng Hon Huan Alfred

DOI: https://doi.org/10.4028/www.scientific.net/MSF.338-342.325

2000-01-01

Materials Science Forum

Abstract:In this study, hydrogenated amorphous silicon carbon (a-Si1-xCx: H) thin films were synthesized on Si substrates by plasma enhanced chemical vapor deposition (PECVD) technique. The source gases used were C2H4, SiH4, and H-2 (for dilution). The compositional parameter x is found to be closely relevant to practical vibrational and optical properties of this material. XPS and FTIR spectra strongly support the existence of C-Si covalent bonds in the grown thin films. Raman spectra do not show a strong Si-C Raman peak. The Photoluminescence result is quite different from the previous reports.
Structure and Optical Properties of A-C:H/a-sio X :H Multilayer Thin Films

WP ZHANG,JB CUI,S XIE,YZ SONG,CS WANG,G ZHOU,JX WU

DOI: https://doi.org/10.1117/12.47274

1991-01-01

Abstract:Amorphous multilayer thin film a-C:H/a-Si:H was deposited by magnetron sputtering. X-ray diffraction and Auger electron spectroscopy measurements indicate very well the periodicity of the sample. The shift and broadening of the photoluminescence peak are interpreted in light of quantum size effect.

Structural Characteristics of Gd A-Si(s,o):H Films

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Structure and Electronic States in A-Si:H Thin Films

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Structure Of Nc-Si : H Films

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field

Optical and Structural Properties of Α-Si1-xcx Films

Structural and Optoelectronic Properties of A-Si:H: A New Analysis Based on Spectroscopic Ellipsometry

Properties of A-Si∶h Prepared by DBDCVD

Study of Properties of A-Si1-xgex:H Prepared by SAP-CVD Method

Structural Evolution and Electronic Properties of N-Type Doped Hydrogenated Amorphous Silicon Thin Films

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

The Study of the Microstructures in Ar+ Laser Crystallized Asi:H Films for Active Layer of TFT

Microstructural Studies of Noncrystalline Solid Silicon Films by To-Like Modes of Raman-Spectra

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Structural properties of hydrogenated amorphous silicon carbide alloys

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structure and Optical Properties of A-C:H/a-sio X :H Multilayer Thin Films