Study on the Microstructure/growth Orientation Degree and Photoluminescence Properties of ZnO Films with Ti Doping

MA Shu-yi,LIU Jing,ZHAO Qiang,ZHANG Xiao-lei,LI Fa-ming

DOI: https://doi.org/10.3969/j.issn.1001-988x.2013.03.008

2013-01-01

Abstract:The pure ZnO film and Ti-doped ZnO(ZnO∶Ti) thin films with(100) preferred orientation are deposited successfully on silicon(Si) substrate using radio frequency(RF)reactive magnetron sputtering technique.The effect of different Ti doping concentration on the microstructural and optical properties of ZnO∶Ti thin films are investigated by X-ray diffraction(XRD) and photoluminescence(PL).The results show that all of the films have hexagonal wurtzite type structure with obvious(100) preferential orientation,and the thin film texture coefficient Tc(100) increase sharply with adding 2% of Ti doping,which indicates that Ti impurities can influence crystallinzation orientation degree of ZnO films.Compare with pure ZnO thin films,the full width at half-maximum(FWHM) of(100) diffraction peak of ZnO∶Ti thin films widen and the intensity of(100) diffraction peak decrease,and the quality of crystallization of thin films decline.With different Ti doping concentration on ZnO films,its luminescence correspondingly changes,not only intensity changes,but peak positions have been moved on the Si substrates.