Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Adsorption Configuration of Magnesium on Wurtzite Gallium Nitride Surface Using First-Principles Calculations

First-Principles Study Of Mg Incorporation At Wurtzite Inn (0001) And (0 0 0 (1)Over-Bar) Surfaces

Atomic Structure for Mg on Inn(0001) Surface

Study of the heavily p-type doping of cubic GaN with Mg

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Gallium adsorption on (0001) GaN surfaces

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

P-Type Dopant Incorporation and Surface Charge Properties of Catalyst-Free Gan Nanowires Revealed by Micro-Raman Scattering and X-Ray Photoelectron Spectroscopy

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Mg-doped GaN Nanostructures: Energetics, Magnetism, and H2 Adsorption

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

First-principles calculations to investigate the interfacial energy and electronic properties of Mg/AlN interface

First-principles study of the effects of doping B, N, and O on the photoelectric properties of Cr adsorbed GaS

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Co-doping of magnesium with indium in nitrides: first principle calculation and experiment

Effective P-type N-doped α-Ga2O3 from First-Principles Calculations

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN