The Hard Inclusions in Multi-crystalline Silicon Ingot and their Formation

DENG Tai-ping,DU Guo-ping,ZHOU Lang
2008-01-01
Abstract:The hard inclusions are frequently found in multi-crystalline silicon ingot for solar cells.They may cause wire breaking in wire-cutting production of solar wafers,and affect adversely the quality of the solar cells.Scanning electron microscope associated with energy spectrometer for characteristic X-ray,3D digital microscope and FTIR have been used to analyze the fractured and polished cross section surface of the multi-crystalline silicon samples,respectively,and precipitates after dissolving the silicon matrix,and the concentration of free carbon in the silicon wafer sample.The results indicate a high density of large SiC and Si3N4 particles in the top layer of the ingot.The density decreases rapidly with depth.In the middle of the ingot,very few and fine SiC inclusion can be found,though large SiC particles(~100 μm) do exist sometime.Concentration of free carbon in the wafer is found to be much lower than that in equilibrium with SiC.The reasons for formation of SiC are discussed with respect to the results.Possible solutions for reduction of SiC inclusions in multi-crystalline silicon ingot are suggested.
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