Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Silicon Electro-Optic Modulators Using P-I-n Diodes Embedded 10-Micron-diameter Microdisk Resonators.

Silicon Electro-optic Modulators Based on p-i-n Diodes Integrated Microdisk and Microring Resonators

Silicon-on-insulator Electro-Optically Tunable Waveguide-Coupled Microdisk Resonators with Selectively Integrated P-I-n Diodes

Silicon depletion-type microdisk electro-optic modulators using selectively integrated Schottky diodes

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Optical modulation and detection based on a PN junction embedded silicon waveguide

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Optoelectronic Oscillator Based on a Silicon Microring Modulator

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator

A Silicon Nitride Microring Modulator for High-Performance Photonic Integrated Circuits

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Silicon Electro-Optic Switches using Microring Resonators with Phase-Tunable Feedback

Microring And Microdisk Resonator Integrated Circuits On A Silicon Chip

Hybrid Lithium Tantalite-Silicon Integrated Photonics Platform for Electro-Optic Modulation.

Design Optimization and Implementation of Silicon Mach-Zehnder Electro-Optic Modulators

Silicon Microdisk Resonator-Based Active Devices Using Embedded P-N Diodes

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode