Abstract:Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation.

Silicon depletion-type microdisk electro-optic modulators using selectively integrated Schottky diodes

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Silicon Electro-optic Modulators Based on p-i-n Diodes Integrated Microdisk and Microring Resonators

Silicon Electro-Optic Modulators Using P-I-n Diodes Embedded 10-Micron-diameter Microdisk Resonators.

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Accurate High-Speed Eye Diagram Simulation of Silicon-Based Modulators

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Breaking the Energy-Bandwidth Limit of Electrooptic Modulators: Theory and a Device Proposal

Design Optimization and Implementation of Silicon Mach-Zehnder Electro-Optic Modulators

Bandwidth Performances Analysis for High-Speed Silicon Depletion-Mode Modulator.

Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach–Zehnder Modulators

Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Microring And Microdisk Resonator Integrated Circuits On A Silicon Chip

Integrated silicon carbide electro-optic modulator

A Silicon Nitride Microring Modulator for High-Performance Photonic Integrated Circuits