Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Luminescence of Strain Compensated Si/Si0.62 Ge0.38 Quantum Well Grown on Si0.75 Ge0.25 Virtual Substrate

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Strain-induced Anodization of SiGe/Si Multiple Layers to Form High Density SiGe/Si Heterogeneous Nanorods

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate