Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Strain-induced Anodization of SiGe/Si Multiple Layers to Form High Density SiGe/Si Heterogeneous Nanorods

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

SiGe Porous Nanorod Arrays As High-Performance Anode Materials for Lithium-Ion Batteries

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Synthesis and Raman Spectra of Si-Nanowires

Strain engineering in Ge/GeSn core/shell nanowires

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Spontaneous Superlattice Formation in Nanorods Through Partial Cation Exchange

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Raman spectra study of strained SiGe alloys

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Strain Engineering and Mechanical Assembly of Silicon/germanium Nanomembranes

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems