Abstract:Wurtzite p-type GaN epilayer, which has a thickness of 0.5μm, is prepared by MOCVD on GaN buffer with sapphire substrate. Magnetic doping of the p-type GaN epilayer is achieved by 180keV Mn+ ions implantation. The GaN films are all implanted with dose of 5×1015cm−2, while are kept at different temperatures during the implantation, i.e. room temperature, 300 and 500°C, respectively. After an annealing step at 850°C for 30s in flowing N2, the magnetism of the Mn+-implanted p-GaN films is investigated by superconducting quantum interference device (SQUID). In the sample implanted at room temperature the magnetism is weak and no ferromagnetism is found. In the 300°C implanted p-GaN film ferromagnetism is found with obvious hysteresis loop. Further increase in the implantation temperature to 500°C brings about no increase in ferromagnetism. Combined with the structural characteristics of the Mn+-implanted p-GaN films studied by X-ray diffraction (XRD), one concludes that only suitable increase of the implantation temperature could be beneficial to the recovery of implantation defects and the generation of ferromagnetism in the Mn+-implanted p-GaN films.

Preparation and Characterization of Room-Temperature Ferromagnetism GaMnN Based on Ion Implantation

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Magnetic and Optical Properties of Cr+-Implanted Gan

Ferromagnetic properties and structure of MnPLU ion-implanted GaAs

The influence of implantation temperature on the magnetism and structure of Mn+ implanted p-GaN films

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Room-Temperature Ferromagnetism in N+-Implanted Zno:Mn Thin Films

Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

Magnetic and structural properties of Fe-implanted GaN at room temperature

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Optical and Structural Properties of Mn-Implanted GaN Films

Magnetic Properties of Mn-Implanted N-Type Ge

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Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

GROWTH AND CHARACTERIZATION OF Be-CODOPED GaMnAs

Observation of Room Temperature Ferromagnetism and Exchange Bias in a 55mn+ Ion-Implanted Unintentionally Doped Β-Ga2o

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Study of Mn- Implanted N- Type Ge

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C