Abstract:Continuously scaling down ICs result in more stringent electrostatic discharge (ESD) protection design requirements. Compared with other devices, silicon-controlled rectifier (SCR) has become the first choice for its area efficiency and robustness. In order to improve the latch-up issue of SCR, various schemes have been proposed. A simple method is to extend the SCR path length, which will result in the enlarged ON resistance. Segment technology is also used to improve the holding voltage of SCR, but it will shrink the effective emitter area and lead to the serious degradation of ESD robustness. MS-LVTSCR is used to protect CMOS input ports. The circuit operating voltage is 3.3V and the gate oxide DC breakdown voltage is 19V so that considering the safety margin, the ESD window is from 3.63V to 17.1V. This work proposes a novel MOS shunt low-voltage trigger silicon-controlled rectifier (MS-LVTSCR) electrostatic discharge protection device by inserting an embedded PMOS structure. Compared with the conventional LVTSCR, the proposed MS-LVTSCR achieves 53% improvement in the holding voltage and still maintains high ESD robustness with a current level of 31.5 mA/ μ m without more device area consumption. In addition, both the TCAD simulation and theoretical analysis were carried out to explore the principle of current shunt effect to improve holding voltage. The extra shunt paths will weaken the conductance modulation effect of the main drift region in the main SCR path and its holding voltage can be further raised by reducing the proportion of main drift region current in the total current. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via experimental validations.

SCR based ESD protection in SOI technologies

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Key factors affecting trigger voltage of SCRS for ESD protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Study of LDMOS-SCR: A High Voltage ESD Protection Device

High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 Nm Process

Robustness-Improved ESD Protection Devices with Low Leakage Using Middle Silicon Layer in Double SOI Technology

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

A Robust Polysilicon-Assisted SCR in ESD Protection Application

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

New Electrostatic Discharge Protection Device for VBO High Speed Chip

FOD Based ESD Protection Devices in Deep Sub-micron Technology

A novel Electrostatic Discharge protection design based on SCR

Investigation on MOS shunt LVTSCR for ESD application