Abstract:Direct wafer-bonded InP–GaAs structures were studied by cross-sectional observations using a field-emission scanning-electron microscope (FESEM) and by infrared-absorbance spectra using a Fourier-transform infrared spectroscopy. FESEM observations demonstrate that the interfaces of 560 and 580 °C bonded InP–GaAs structures are smooth and uninterrupted, while interfacial gaps appear for the samples bonded at 620 and 680 °C. However, large dimensional areas of bonding interfaces cannot be observed by FESEM because its inspection size is limited to microregions. Experimental results show that infrared-absorbance measurements can be an effective method for quality examination of bonded InP–GaAs structures. By soaking wax into poorly bonded interfaces and using its absorption characteristics at 3.383, 3.426, and 3.509μm, interfacial gaps are indirectly measured by infrared spectra. Absorbance-intensity mappings at absorption peaks were used to image poorly bonded areas. Thus the interface quality of the whole wafer-bonded sample can be seen clearly. Nonuniform pressure applied over the sample during annealing step accounts for poorly bonded interfaces. Using the improved fixture, uniformly bonded InP–GaAs structures that do not have interfacial gaps were obtained.

Interface of Wet Oxidized AlGaAs/GaAs Distributed Bragg Reflectors

GaAs/AlAs DBR optimized growth by GSMBE and its characterization

Improvement of the Oxidation Interface in an AlGaAs/AlxOy Waveguide Structure by Using a GaAs/AlAs Superlattice

Improvement of the oxidation interface in an AlGaAs/AlxO y waveguide structure by using a GaAs/AlAs superlattice

Structural Characterization of AlGaN/AlN Bragg Reflector Grown by Metalorganic Chemical Vapor Deposition

Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Design and Characterization of AlGaN/GaN Distributed Bragg Reflectors

High-Reflectivity Algan/Aln Distributed Bragg Reflector In Ultraviolet Region

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

MOCVD Growth of AlGaN/GaN Distributed Bragg Reflectors

Observation on the Interface of Α-Al2o3/cr2o3: Prepared by Oxidation of Al45Cr7

High Reflectivity AlGaN/AlN DBR Mirrors Grown by MOCVD

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

The Template Effects on AlN/Al0.3Ga0.7N Distributed Bragg Reflectors Grown by MOCVD

Study on Infrared Absorption of Interfaces in Direct Wafer Bonded InP-GaAs Structures

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

Study on development of Cr/GaAs(100) interface with SRPES

Composition Pulling Effect and Strain Relief Mechanism in AlGaN/AlN Distributed Bragg Reflectors

Microstructure of GaAs/AlAs/GaAs with and Without Oxidation

Preparation of large-area, high quality, free-standing GaN distributed Bragg reflectors