Abstract:Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-doped n++-Al0.01Ga0.99N and undoped GaN instead of widely used multiple pairs of heavily silicon-doped n++-GaN and undoped GaN for the fabrication of a lattice-matched distributed Bragg reflector (DBR) by using an electrochemical (EC) etching technique, where the lattice mismatch between Al0.01Ga0.99N and GaN can be safely ignored. By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Our work demonstrates that the NP-Al0.01Ga0.99N/undoped GaN-based DBR exhibits a much smoother surface, enhanced reflectivity and a wider stopband than the NP-GaN/undoped GaN-based DBR. Furthermore, the NP-Al0.01Ga0.99N/undoped GaN-based DBR sample with a large size (up to 1 mm in width) can be obtained, while a standard NP-GaN/undoped GaN-based DBR sample obtained is typically on a scale of a few 100 μm in width. Finally, a series of DBR structures with high performance, ranging from blue to dark yellow, was demonstrated by using multiple pairs of n++-Al0.01Ga0.99N and undoped GaN.

Composition Pulling Effect and Strain Relief Mechanism in AlGaN/AlN Distributed Bragg Reflectors

MOCVD Growth of AlGaN/GaN Distributed Bragg Reflectors

Properties of an AlGaN/AlN distributed-Bragg-reflector structure

The Effects of Material Structures on Characteristics of AlGaN DBRs

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

The Template Effects on AlN/Al0.3Ga0.7N Distributed Bragg Reflectors Grown by MOCVD

Structural Characterization of AlGaN/AlN Bragg Reflector Grown by Metalorganic Chemical Vapor Deposition

High Reflectivity AlGaN/AlN DBR Mirrors Grown by MOCVD

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

High Reflectivity Ultraviolet Distributed Bragg Reflector Based On Algan/Algan Multilayer

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

GaAs/AlAs DBR optimized growth by GSMBE and its characterization

Design and Characterization of AlGaN/GaN Distributed Bragg Reflectors

Influence of Aln Thickness on Strain Evolution of Gan Layer Grown on High-Temperature Aln Interlayer

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition