Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

Yunlong Zhao,Jia Guo,Markus Feifel,Hao-tien Cheng,Yun-cheng Yang,Liming Wang,Lukas Chrostowski,David Lackner,Chao-hsin Wu,Guangrui

DOI: https://doi.org/10.48550/arXiv.2201.04937

2021-12-23

Abstract:High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **To successfully achieve the monolithic integration of high - quality 940 nm AlGaAs distributed Bragg reflectors (DBRs) on large - size germanium (Ge) substrates, so as to meet the requirements of large - scale production of vertical - cavity surface - emitting lasers (VCSELs).**

Specifically, the paper aims to solve the following key problems:

1. **Reduce substrate warpage and strain**: Traditional GaAs substrates are prone to warpage and strain during the growth process, resulting in a decline in chip yield and reliability. The Ge substrate, because its lattice constant is between that of GaAs and AlAs, can reduce this strain, thereby improving the performance and reliability of VCSELs.

2. **Increase production scale and reduce cost**: By using larger - size Ge substrates (such as 8 - inch and 12 - inch), the production scale of VCSELs can be significantly increased, the manufacturing cost can be reduced, and larger - scale VCSEL arrays can be made more popular.

3. **Optimize material properties and growth conditions**: Research on how to grow high - quality AlGaAs DBRs on Ge substrates to ensure that their optical and material properties such as reflectivity, periodicity, and uniformity are equivalent to or better than those of DBRs on traditional GaAs substrates.

Through detailed experiments and characterizations, the paper verifies the feasibility of growing AlGaAs DBRs on Ge substrates and provides important technical support and reference basis for the large - scale production of VCSELs in the future.