Abstract:Diamond films with different crystal structures, morphologies and surface characteristics were synthesized under various deposition parameters and annealing conditions by the microwave plasma chemical vapor deposition (MWPCVD) method using gas mixtures of CH4, CO and H2. The effects of CH4 concentrations, grain sizes, grain orientations, film thicknesses and annealing technologies in various ambient gases on planar electron emission of diamond films were studied. The results show that small-grained and (011)-oriented diamond films deposited under the condition of high CH4 concentration present the properties of high emission current and low threshold voltage; the emission current increases with decreasing the film thickness. There are largest current density and lowest threshold voltage at the film thickness of 1.5 μm. The annealing in H2 after deposition appears to be more beneficial in lowering the threshold voltage, increasing emission current and improving stability for electron emission of films than annealing in N2 or Ar. These results indicate that diamond thin films with high emission current, low threshold voltage and high stability can be obtained by selecting suitable deposition parameters of diamond films.

Ultraviolet Electroluminescence at Room Temperature from a Pn Junction of Heteroepitaxial Diamond Film by CVD

Ultraviolet Laser Properties Of Diamond Films By Cvd

Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction

Enhanced Red Electroluminescence from A Polycrystalline Diamond Film/Si Heterojunction Structure

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electron Emission from Polycrystalline Diamond Film with New Structure

Electron Emission from Diamond Thin Films Deposited by Microwave Plasma-Chemical Vapor Deposition Method

Ultraviolet Detector Based on ZnO/Diamond Film Heterojunction Diode

Ultraviolet Electroluminescence from N-Zno/p-nio Heterojunction Light-Emitting Diode

The Heterojunction Structure of N-Si/P-Nanocrystalline Diamond Film for Uv Detection

Metal-Insulator-Vacuum Type Electron Emission from N-Containing Chemical Vapor Deposited Diamond

Electroluminescence of Double-Doped Diamond Thin Films

Electroluminescence of diamond films induced by a scanning tunneling microscope

Electronic-Properties of Semiconducting Diamond-Like Carbon Diamond

Observation of a New Type of Field-Induced Electron Emission from a Diamond-Based Heterostructure

Observation of a Non Fowler–Nordheim Field-Induced Electron Emission Phenomenon from Chemical Vapor Deposited Diamond Films

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Electroluminescence from Multilayered Diamond/CeF 3 /sio 2 Films

Ultraviolet Electroluminescence from Randomly Assembled N-Sno(2) Nanowiresp-Gan:Mg Heterojunction.

Field emission performance of diamond film with grid

Ultraviolet Electroluminescence Properties from Devices Based on N-Zno/I-Nio/P-Si Light-Emitting Diode