Preparation and characteristics of pentacence crystal thin films

Zengqi Xie,Yutian Wang,Yuguang Ma,Jiacong Shen
DOI: https://doi.org/10.1016/S0379-6779(02)00992-X
IF: 4
2003-01-01
Synthetic Metals
Abstract:The pentacence thin films with large size (thickness of 15 h m and wideness of several millimeters) and high degree of crystalline perfection were prepared in a modified film growth apparatus in air pressure. The. effects of film growth parameters such as the temperature of source and deposition zone, and gas flow rates on the film quality have been tested. X-ray analysis demonstrated a well order molecular stacking with layer-by-layer structure and the distance between two adjacent molecule layers is 14.17 Angstrom for a film deposited by an optimized condition.
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