Negative Magnetoresistance in Dual Spin Valve Structures with a Synthetic Antiferromagnetic Free Layer

C. Fowley,B. S. Chun,H. C. Wu,M. Abid,J. U. Cho,S. J. Noh,Y. K. Kim,I. V. Shvets,J. M. D. Coey
DOI: https://doi.org/10.1109/tmag.2009.2018589
IF: 1.848
2009-01-01
IEEE Transactions on Magnetics
Abstract:We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.
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