Study of Amorphous Carbon Nitride Films by X-ray Photoelectron Spectroscopy

Dihu Chen,Aixing Wei,S. P. Wong,Shaoqi Peng,R. W. M. Kwok

DOI: https://doi.org/10.1116/1.1247923

1999-01-01

Surface Science Spectra

Abstract:X-ray photoelectron spectroscopy measurements of amorphous carbon nitride films have been performed. The samples were prepared by magnetic filtered plasma deposition, and cleaned by Ar+ ion sputtering before analysis to eliminate the surface contamination. The spectra include standard survey scans and high resolution scans of the photoelectron peaks of C, N, and O atoms. These spectra were collected using a monochromatic Mg Kα x-ray source operated at 300 W (20 mA, 15 kV). The survey scans were collected using an 80 eV pass energy, while high resolution scans were recorded using a 20 eV pass energy. By deconvolution of the XPS spectra, it was found that the XPS C 1s and N 1s signals could be deconvoluted into three and two Gaussian peaks, respectively. A plausible suggestion on the assignments of XPS peaks to C3N4, CNx, and ta-C phases was discussed. The relative abundance of CN bonds, calculated from the area of the respective C 1s Guassian peaks divided by the total area of the C 1s spectra, was determined to be 80%, and the actual nitrogen content in films in terms of atomic percentage is 46%.