Photoluminescence Properties of Er-Doped HfO2 Films

Yan Xia,Junzhuan Wang,Zhuoqiong Shi,Yi Shi,Lin Pu,Rong Zhang,Youdou Zheng,Zhensheng Tao,Fang Lu
DOI: https://doi.org/10.3321/j.issn:0253-4177.2007.09.011
2007-01-01
Chinese Journal of Semiconductors
Abstract:Er-doped HfO2 films were grown by pulsed laser deposition(PLD) and ion implantation.The room-temperature and varied-temperature PL spectra were observed.By analyzing the PL peak intensity of Er3+ at 1535nm as a function of annealing temperature,we found that annealing at 800℃ can reduce the nonradiative decay channels in HfO2 films such as implantation-induced defects and optically activate Er ions at best,causing the strongest photoluminescence.The PL excitation spectrum of Er3+ in HfO2 film at room temperature shows that there is also indirect excitation besides the direct excitation during the light-emitting process of Er3+.HfO2 films will be a good host material for Er implantation.
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