Abstract:Nanotubular hafnia arrays hold significant promise for advanced opto- and nanoelectronic applications. However, the known studies concern mostly the luminescent properties of doped HfO2-based nanostructures, while the optical properties of nominally pure hafnia with optically active centers of intrinsic origin are far from being sufficiently investigated. In this work, for the first time we have conducted research on the wide-range temperature effects in the photoluminescence processes of anion-defective hafnia nanotubes with an amorphous and monoclinic structure, synthesized by the electrochemical oxidation method. It is shown that the spectral parameters, such as the position of the maximum and half-width of the band, remain almost unchanged in the range of 7–296 K. The experimental data obtained for the photoluminescence temperature quenching are quantitatively analyzed under the assumption made for two independent channels of non-radiative relaxation of excitations with calculating the appropriate energies of activation barriers—9 and 39 meV for amorphous hafnia nanotubes, 15 and 141 meV for monoclinic ones. The similar temperature behavior of photoluminescence spectra indicates close values of short-range order parameters in the local atomic surrounding of the active emission centers in hafnium dioxide with amorphous and monoclinic structure. Anion vacancies VO− and VO2− appeared in the positions of three-coordinated oxygen and could be the main contributors to the spectral features of emission response and observed thermally stimulated processes. The recognized and clarified mechanisms occurring during thermal quenching of photoluminescence could be useful for the development of light-emitting devices and thermo-optical sensors with functional media based on oxygen-deficient hafnia nanotubes.

Oxygen Defect Induced Photoluminescence of HfO2 Thin Films

Photoluminescence Properties of Er-Doped HfO2 Films

Annealing behaviors of structural, interfacial and optical properties of HfO 2 thin films prepared by plasma assisted reactive pulsed laser deposition

Microstructure, Optical Properties, and Optical Resonators of Hf1-Xtixo2 Amorphous Thin Films

Contribution of Oxygen Vacancies to Phase Transition and Ferroelectricity of Al:HfO2 Films

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2films.

Structure and Dielectric Properties of HfO2 Thin Films

1.54 Μ M Photoluminescence Emission and Oxygen Vacancy As Sensitizer in Er-doped HfO2 Films

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO 2 films

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO<sub>2</sub>films

Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO 2 thin films

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Ultraviolet Emission in ZnO Films Controlled by Point Defects

Enhancement of Electroluminescence from Tio2/P(+)-Si Heterostructure-Based Devices Through Engineering of Oxygen Vacancies in Tio2

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2

Effect of annealing on the properties of plasma-enhanced atomic layer deposition grown HfO 2 coatings for ultraviolet laser applications

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Thermal Quenching of Intrinsic Photoluminescence in Amorphous and Monoclinic HfO2 Nanotubes