Abstract:In this work, the intentional insertion of slots in metal gate (MG) is introduced to solve the dishing issue for the double-diffused drain MOSFET (DDDMOSFET) fabrication. For traditional DDDMOSFET, the gate oxide layer in slots will be reserved to improve the device reliability, which requires an additional photomask to screen the gate/slot regions during the following sidewall formation and source/drain (S/D) implantation. This makes the process more complicated with increased cost. Without that additional photomask, it is proposed that the removal of gate oxide layer in slots can directly allow the floating S/D formation and the followed Ni silicidation there. It is demonstrated that such a novel process can not only relieve the MG dishing issue but can also effectively result in ~16% higher ON current and comparable OFF current for both N- and P-DDDMOSFETs without threshold voltage shift after applying electrical stress on gates. It is also revealed that the floating silicided S/Ds in slots have negligible influence on device breakdown characteristics. By saving one photomask, this work proposes a novel solution for the effective integration of core devices with very small feature sizes and high-voltage (HV) devices with large feature sizes in the same die, which is a common challenge for display driver chip fabrication using high- ${k}$ /MG (HK/MG) technology.

Mosfets with Recessed Sige Source/Drain Junctions Formed by Selective Etching and Growth

Research on Integrated Trench Etching for Trench-Type Power MOSFET

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Trench MOS-gated power devices

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Recessed source/drain for scaling SOI MOSFET to the limit

Asymmetric Ingaas/Inp Mosfets With Source/Drain Engineering

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Towards Schottky-Barrier Source/Drain Mosfets

Self-align Recessed Source Drain Ultrathin Body SOI MOSFET

A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

Design, fabrication and operation of sub-65nm straeved-si/si 1-xGEx mosfets

Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

Ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

Integration of Highly Strained Sige in Source and Drain with Hk and Mg for 22 Nm Bulk Pmos Transistors