A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth
Weikang Zhao,Yan Teng,Kun Tang,Shunming Zhu,Kai Yang,Kangkang Fan,Gengyou Zhao,Liangxue Gu,Bo Feng,Rong Zhang,Youdou Zheng,Shulin Gu
DOI: https://doi.org/10.1016/j.diamond.2024.111317
IF: 3.806
2024-01-01
Diamond and Related Materials
Abstract:Nitrogen is widely believed to accelerate the diamond growth by chemical vapor deposition (CVD). While there is currently no consensus on the reaction mechanism of nitrogen increasing the growth rate of CVD diamond. In this work, we have proposed a chemical adsorption model formed by substitutional nitrogen on the H-terminated surface of diamond. The first principles calculations based on density functional theory are used to systematically study the effects of substitutional nitrogen on several key features (i.e., surface absorption energy, geometric structure, atomic charge, electron bond population, and electron density) of the H-terminated surfaces. The results indicate that nitrogen substituted on the H-terminated surface are probably more favorable for hydrogen desorption, which can not only affect the properties of directly bonding adjacent species, but also cause changes in the geometric and electronic properties around the surface by electron transfer or forming additional covalent bonds. Furthermore, compared with single nitrogen doping, the co-doped structures formed by adding boron or phosphorus at a relatively low N/H ratio on the H-terminated surface could enhance or weaken the stability of the diamond surface, that is, weaken or enhance the desorption process of hydrogen. It is therefore proved the existence of a regulatory effect on the threshold concentration required for nitrogen to accelerate diamond growth.