Synthesis and characterization of boron carbon nitride films by radio frequency magnetron sputtering

Z.F Zhou,I Bello,M.K Lei,K.Y Li,C.S Lee,S.T Lee
DOI: https://doi.org/10.1016/S0257-8972(00)00600-9
2000-01-01
Abstract:Boron carbon nitride (BCN) films were deposited on silicon substrates by radio frequency (r.f.) (13.56 MHz) magnetron sputtering from hexagonal boron nitride (h-BN) and graphite targets in an Ar-N-2 gas mixture of a constant pressure of 1.0 Pa. During deposition, the substrates were maintained at a temperature of 400 degrees C and negatively biased using a pulsed voltage with a frequency of 330 kHz. Different analysis techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), Fourier transform infrared spectroscopy (FLTIR), Raman spectroscopy, X-ray diffraction (XRD) and scanning Auger electron microscopy (SAM) were used for characterization. In addition, the mechanical and tribological properties of the films were investigated by nano-indentation and micro-scratching. The carbon concentration in the films could be adjusted by the coverage area of a graphite sheet on the h-BN target, and decreased with increasing bias voltage. It was found that the ternary compound films within the B-C-N composition triangle possessed a less ordered structure. B-N, B-C and C-N chemical bonds were established in the films, and no phase separation of graphite and h-BN occurred. At zero bias voltage, amorphous BC2N films with atomically smooth surface could be obtained, and the microfriction coefficient was 0.11 under a normal load of 1000 mu N. Hardness as determined by nano-indentation was usually in the range of 10-30 GPa, whereas the Young's modulus was within 100-200 GPa. (C) 2000 Elsevier Science S.A. All rights reserved.
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