The Carbon Nitride Films Prepared at Various Substrate Temperatures by Vacuum Cathodic Arc Method

ZM Zhou,LF Xia,R Sun
DOI: https://doi.org/10.1016/j.diamond.2003.08.015
IF: 3.806
2004-01-01
Diamond and Related Materials
Abstract:Carbon nitride films have been grown by vacuum cathodic arc method in the substrate temperature range of 100–500 °C. The bonding structure of the films was investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and infrared (IR) spectroscopy. With increasing substrate temperature, the films indicate various characteristics. At 100 °C, it can be described as a network similar to DLC in which aromatic sp2C phase is cross-linked by sp3C phase. Between 200 and 400 °C, with increasing substrate temperature the films become graphitized and the sp2CN phase increases, meanwhile the non-aromatic sp2CN phase appears at the edges of aromatic clusters in planar position as well as in out-of-planar regions. While at 500 °C the non-aromatic sp2CN phase almost comes to the same level as the aromatic sp2CN phase. So in the network of the film the aromatic sp2C phase is cross-linked by the non-aromatic sp2C phase. Based on the variation of the microstructure of the films, a comprehensive assignment pattern for the XPS C1s and N1s at different substrate temperature is proposed. In addition, the interpretation of p electron band in valence band spectra at various substrate temperatures is also discussed.
What problem does this paper attempt to address?