Abstract:Mechanical dicing is a critical step in producing electronic chips and devices. Single crystal silicon carbide (SiC) is a vital wafer material in modern electronic chips because of its exceptional physical properties, such as wide bandgap and high breakdown voltage. However, the high hardness of SiC makes it extremely challenging to achieve the dicing quality required for the reliable functioning of electronic chips. The removal characteristics of single crystal SiC in mechanical dicing process remains largely unclear. This work aims to systematically investigate the influences of diamond abrasives in ultrathin blades on the dicing force, chipping size, surface roughness, and material removal of single crystal SiC in mechanical dicing. Experimental results indicate the diamond abrasives considerably affect the chipping formation and the material removal of SiC workpieces by changing the undeformed chip thickness. Theoretical analysis based on the classic brittle-ductile transition model reveals that single crystal SiC can be removed in a ductile-like mode using relatively large abrasive size and low concentration, as long as the undeformed chip thickness is sufficiently smaller than the calculated critical depth of cutting. In addition, the mounting method of single crystal SiC workpieces and the wear characteristics of diamond blades play a crucial role in the removal behaviours and, therefore, the dicing quality. An example was given to demonstrate the feasibility of simultaneously improving the dicing quality and the removal rate via appropriately increasing concentration and reducing sizes of abrasives in ultrathin blades. Ultimately, the findings in this research provide a guideline for further optimization of the dicing tools and parameters for other hard-and-brittle solids.

Effect of Size Distribution of SiC Particles on Silicon Crystals Wire Sawing Process

Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon

Experiment study on electroplated diamond wire saw slicing single-crystal silicon

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

A Study on the Lubrication and Cooling Mechanism of Nano–Silicon Carbide Cutting Fluids for Diamond-Wire Sawing

Evaluation of Fixed Abrasive Diamond Wire Sawing Induced Subsurface Damage of Solar Silicon Wafers

Surface formation, morphology, integrity and wire marks in diamond wire slicing of mono-crystalline silicon in the photovoltaic industry

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

Surface damage in wire-cut silicon wafers

Investigation on diamond damaged process during a single-scratch of single crystal silicon carbide

Impact of multiple abrasive particles on surface properties of SiC: A molecular dynamics simulation study

Effect of Grain Size on Nanometric Cutting of Polycrystalline Silicon via Molecular Dynamics Simulation

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

Influence of silicon anisotropy on surface shape deviation of wafer by diamond wire saw

Analysis of the high-efficiency and low-damage abrasive processing mechanism for SiC based on the SPH simulation of single-grain indentation and scratching

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser

Effect of Roughness and Wettability of Silicon Wafer in Cavitation Erosion

Anisotropy of Single-Crystal Silicon in Nanometric Cutting

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser