Abstract:Mechanical dicing is a critical step in producing electronic chips and devices. Single crystal silicon carbide (SiC) is a vital wafer material in modern electronic chips because of its exceptional physical properties, such as wide bandgap and high breakdown voltage. However, the high hardness of SiC makes it extremely challenging to achieve the dicing quality required for the reliable functioning of electronic chips. The removal characteristics of single crystal SiC in mechanical dicing process remains largely unclear. This work aims to systematically investigate the influences of diamond abrasives in ultrathin blades on the dicing force, chipping size, surface roughness, and material removal of single crystal SiC in mechanical dicing. Experimental results indicate the diamond abrasives considerably affect the chipping formation and the material removal of SiC workpieces by changing the undeformed chip thickness. Theoretical analysis based on the classic brittle-ductile transition model reveals that single crystal SiC can be removed in a ductile-like mode using relatively large abrasive size and low concentration, as long as the undeformed chip thickness is sufficiently smaller than the calculated critical depth of cutting. In addition, the mounting method of single crystal SiC workpieces and the wear characteristics of diamond blades play a crucial role in the removal behaviours and, therefore, the dicing quality. An example was given to demonstrate the feasibility of simultaneously improving the dicing quality and the removal rate via appropriately increasing concentration and reducing sizes of abrasives in ultrathin blades. Ultimately, the findings in this research provide a guideline for further optimization of the dicing tools and parameters for other hard-and-brittle solids.

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Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

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Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

Experimental Investigation on the Surface Formation Mechanism of NdFeB during Diamond Wire Sawing

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

Sawing Force Prediction Model and Experimental Study on Vibration-Assisted Diamond Wire Sawing

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

Experiment and theoretical prediction for surface roughness of PV polycrystalline silicon wafer in electroplated diamond wire sawing

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Investigation on surface generation mechanism of single-crystal silicon in grinding: Surface crystal orientation effect

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Removal Mechanism in Wire-Sawing of Hard-Brittle Material

Prediction and verification of wafer surface morphology in ultrasonic vibration assisted wire saw (UAWS) slicing single crystal silicon based on mixed material removal mode