Abstract:At present, wire sawing technology is the primary slicing method used for certain brittle materials, including monocrystalline silicon, sapphire, and silicon carbide. The surface quality of the sawn wafers significantly impacts subsequent machining processes, such as grinding and polishing. A theoretical model was developed to predict the amount of material removed per unit length of wire during the slicing of circular workpieces by a wire saw with reciprocating and rocking functions. Experiments were conducted during this study in which crystal ingots were sliced using a multi-wire saw, and the amount of material removed per unit length of wire was determined at different cutting positions on the workpiece cross-section. The surface roughness of each crystal wafer was measured systematically. The experimental results revealed that the surface roughness values measured at different points at the same y -coordinate position on a single wafer were approximately equal. However, the surface roughness was greatest on both the initial and final cutting edges and gradually decreased toward the wafer center. The surface roughness was also greatest for the wafer cut nearest to the new wire side, though it gradually decreased for wafers cut nearer to the center of the workpiece and remained relatively consistent from the middle wafer to the wafer cut nearest to the used wire side. The results also indicated that both the material removed per unit length of wire and the surface roughness of the wafer decreased with increases in the wire speed. The relationship between the material removed per unit length of wire and the surface roughness was approximately linear. When the material removed per unit length of wire was set to 0.00333 mm 3 /m, the average wafer surface roughness was 0.45 μm.

Experiment and theoretical prediction for surface roughness of PV polycrystalline silicon wafer in electroplated diamond wire sawing

The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon

Prediction and verification of wafer surface morphology in ultrasonic vibration assisted wire saw (UAWS) slicing single crystal silicon based on mixed material removal mode

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon

Sawing Force Prediction Model and Experimental Study on Vibration-Assisted Diamond Wire Sawing

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

Analytical prediction of subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted wire sawing

Surface formation, morphology, integrity and wire marks in diamond wire slicing of mono-crystalline silicon in the photovoltaic industry

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

Influence of silicon anisotropy on surface shape deviation of wafer by diamond wire saw

Theoretical study on sawing force of ultrasonic vibration assisted diamond wire sawing (UAWS) based on abrasives wear

Study on Analytical Model of Surface Roughness Prediction in NC Machining

Experiment study on electroplated diamond wire saw slicing single-crystal silicon

Modeling and experiment of material removal rate for cutting single-crystal silicon by electrical discharge wire sawing

Experimental Study on the Influence of Wire-Saw Wear on Cutting Force and Silicon Wafer Surface

Material removal rate prediction and surface quality study for ultrasonic vibration polishing of monocrystalline silicon

Fractal analysis on the surface topography of Monocrystalline silicon wafers sawn by diamond wire

Undeformed Chip Width Non-Uniformity Modeling and Surface Roughness Prediction in Wafer Self-Rotational Grinding Process

Surface Roughness Model of Ground 4H-SiC Considering Ductile and Brittle Removal

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Influence of single diamond wire sawing of photovoltaic monocrystalline silicon on the feed force, surface roughness and micro-crack depth