Abstract:Structural and optical properties of the InGaAlAs-based multiple quantum well (MQW) 1.3μm laser structures produced on InP (001) substrates by metal organic vapor phase epitaxy (MOVPE) technique in the regime of selective area growth (SAG) have been studied. An x-ray beam of 10μm diameter generated by a microbeam high-resolution x-ray diffraction (μ-HRXRD) setup based on an imaging one-bounce capillary optic and a three-bounce channel cut Si(004) analyzer crystal has been utilized to measure the diffraction curves from MQW structures grown between oxide mask stripes. The high angular resolution achieved in our experiments allowed accurate measurements of θ–2θ scans over a broad range of angles that was necessary for utilization of fitting algorithms for quantitative analysis of the strain and thickness of individual layers in the MQW structures. The thickness and strain variations in the quantum well and the barrier layers of the MQW SAG structure have been analyzed as a function of the oxide mask width in the range of 15–140μm with the gap between the oxide masks in the range of 15–80μm. Dramatic structural changes from the perfect quality MQW’s in the SAG structures with the narrow oxide masks (less than 45μm) to the strain relaxed MQW’s in the SAG regime with the wide oxide masks (more than 50μm) have been experimentally detected. The spontaneous photoluminescence emission between 1.3 and 1.51μm from the simultaneously grown InGaAlAs-based MQW SAG laser structures have been measured. Using a combination of μ-HRXRD results with the microphotoluminescence data, the optimal SAG mask parameters for the growth of integrated InGaAlAs-based optoelectronic light-emitting components and devices have been determined.

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Interface Layers in In0.532ga0.468as/Inp Superlattices

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate