Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Simulation of the Enhancement of Photon Extraction Efficiency of GaN-Based LED Via Surface Roughening

Role of surface microstructure and shape on light extraction efficiency enhancement of GaN micro-LEDs: A numerical simulation study

High-output power GaN-LED based on surface plasmon enhancement

Studies Of Improving Light Extraction Efficiency Of High Power Blue Light-Emitting Diode By Photo-Enhanced Chemical Etching

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Enhancement of Light Extraction of GaN Light-Emitting Diode Using Opals Layer

A Precise Ray Tracing Simulation Model for GaN Based Light Emitting Diodes

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed P-Type GaN Surface by Using Ni Nanoporous Template

Simulation of Nanoscale ITO Top Grating of GaN LED

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs Using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Study of Grating Layer Location of a GaN Nano-Grated LED for Improvement of Transmission Efficiency

Simulation of the Light Extraction Efficiency of Nanostructure Light-Emitting Diodes

Improvement of Micro-Led Top Emission Through Surface Nanostructures and Chip Design

Surface-plasmon-enhanced GaN-LED Based on the Quasi-Symmetrical Planar Waveguide Structure