Abstract:We demonstrate, for the first time, the fabrication of vertically stacked SiGe nanowire (NW) arrays with a fully CMOS compatible technique. Our method uses the phenomenon of Ge condensation onto Si and the faster oxidation rate of SiGe than Si to realize the vertical stacking of NWs. Gate-all-around n- and p-FETs, fabricated using these stacked NW arrays as the channel (Lg ≥ 0.35 µm), exhibit excellent device performance with high ION/IOFF ratio (∼ 10 6 ), near ideal subthreshold slope (∼62-75 mV/dec) and low drain induced barrier-lowering (∼20 mV/V). The transconductance characteristics suggest quan- tum confinement of holes in the (Ge)-rich outer-surface of SiGe for p-FETs and confinement of electrons in the core Si with signifi- cantly less (Ge) for n-FETs. The presented device architecture can be a promising option to overcome the low drive current restriction of Si NW MOSFETs for a given planar estate. tip (10) to arrange wires for achieving specific functional- ity. These processes lack control in precision, repeatability, and scalability, and, as of now, are far from being able to build 3-D NW stacks in an orderly manner. On the other hand, standard CMOS techniques have demonstrated the fab- rication of multibridge Si channels, using SiGe as sacrificial layers (10)-(13). In this letter, we present a novel method of fabricating vertically stacked lithographically defined lateral SiGe NWs. The width and thickness of NWs are around 20-30 nm with up to four levels stacked vertically on top of each other. Our method is based on the higher oxidation rate of SiGe than Si and with Ge condensation into Si (14). GAA n- and p-FETs are fab- ricated with gate lengths down to 0.35 µm using these 3-D SiGe NW stacks as the channel body. The fabricated devices show excellent device characteristics for both n- and p-MOS devices.

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