Abstract:The study of the temperature dependence of photoluminescence(PL)in self-assembled quantum dots(QDs)is essentially important for the realization of room temperature efficient photonic devices.The temperature dependence of photoluminescence in self-assembled QDs will be directly determined by the temperature dependence of carrier dynamics process in self-assembled QDs.As the temperature increases,the carriers will thermal escape into the wetting layer(WL)from the ground states of an ensemble of QDs with difference sizes and then some of them will be recaptured by other QDs,i.e.carrier will transfer between the ensemble of QDs with difference sizes when the temperature increases.The temperature dependence of carrier dynamics process in self-assembled QDs was simulated with the steady-state rate equation model of carrier dynamics.The model takes into account the temperature depen-dence of the energy band gap of QDs material.The PL spectra of self-assembled QDs at difference temperatures and the temperature dependence of integrated PL intensity,FWHM and peak position were obtained.The results show that the calculated temperature dependence of integrated PL intensity,FWHM and peak position is consistent with the experimental data reported before.The agreement between experimental data and model simulations suggests the description of the carrier dynamics process in self-assembled QDs by the steady-state rate equation model taking into account the temperature dependence of the energy band gap of self-assembled QDs material is viable.

Inhibited Carrier Transfer in Ensembles of Isolated Quantum Dots

Thermal redistribution of photocarriers between bimodal quantum dots

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Variation of the Carrier Lifetime Across the Ground-State Band of Ensemble Quantum Dots: an Indication for Quantum-Dot Characteristics at High Temperatures

Carrier Dynamics in Submonolayer InGaAs∕GaAs Quantum Dots

Carrier Dynamics in Hybrid Nanostructure with Electronic Coupling from an InGaAs Quantum Well to InAs Quantum Dots

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Temperature Dependence of Photoluminescence in Self-assembled Bimodal Quantum Dots

Effect of Thermal Carrier Transfer on Photofluorescence in Self-assembled Quantum Dots

Temperature Dependence of Photoluminescence of Qd Arrays

Temperature Dependence of Carrier Dynamics in an Inhomogeneous Array of Quantum Dots

Carrier Transport In Pbs And Pbse Qd Films Measured By Photoluminescence Quenching

Carrier Emission from the Electronic States of Self-Assembled Indium Arsenide Quantum Dots

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

PL of low-density InAs/GaAs quantum dots with different bimodal populations

Ultrafast Carrier Dynamics in Undoped and P-Doped InAs∕GaAs Quantum Dots Characterized by Pump-Probe Reflection Measurements

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots