Abstract:Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.

Carrier Dynamics in Submonolayer InGaAs∕GaAs Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Carrier Dynamics in Hybrid Nanostructure with Electronic Coupling from an InGaAs Quantum Well to InAs Quantum Dots

Time-resolved Photoluminescence of Sub-Monolayer InGaAs/GaAs Quantum-Dot-quantum-well Heterostructures

Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence

Influence Ofin Situannealing on Carrier Dynamics in InGaAs/GaAs Quantum Dots

Emission Dynamics of Inas Self-Assembled Quantum Dots with Different Cap Layer Structures

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Carrier Emission from the Electronic States of Self-Assembled Indium Arsenide Quantum Dots

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Carrier Dynamics and Recombination Pathways in Ag-In-Zn-S Quantum Dots

Inhibited Carrier Transfer in Ensembles of Isolated Quantum Dots

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

PL of low-density InAs/GaAs quantum dots with different bimodal populations

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Short Exciton Radiative Lifetime In Submonolayer Ingaas/Gaas Quantum Dots

Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

Ultrafast Carrier Dynamics in Undoped and P-Doped InAs∕GaAs Quantum Dots Characterized by Pump-Probe Reflection Measurements