Analysis of Emission Dynamics of a Long Lifetime in Single InAs/GaAs Quantum Dots
Junhui Huang,Hao Chen,Zhiyao Zhuo,Jian Wang,Shulun Li,Kun Ding,Haiqiao Ni,Zhichuan Niu,Desheng Jiang,Xiuming Dou,Baoquan Sun
DOI: https://doi.org/10.48550/arXiv.2102.00791
2021-02-01
Abstract:A very long lifetime emission with non-single exponential decay characteristic has been reported for single InAs/GaAs quantum dot (QD) samples, in which there exists a long-lived metastable state in the wetting layer (WL) [ACS Photonics 2020,7,3228-3235]. In this article we have proposed a new three-level model to simulate the emission decay curve. In this model, assuming that the excitons in metastable state will diffuse and be trapped by QDs, and then emit fluorescence in QDs, a stretched-like exponential decay formula is derived as I(t)=At^({\beta}-1)e^(-(rt)^{\beta}), which can well describe the long lifetime decay curve with an analytical expression of average lifetime <{\tau}>=1/r{\Gamma}(1/{\beta}+1), where {\Gamma} is the Gamma function. Furthermore, based on the proposed three-level model, an expression of the second-order auto-correlation function g^2 (t) which can well fit the measured g^2 (t) curve is also obtained.
Quantum Physics