Abstract:Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.

Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence

Dynamic Vibronic Coupling in InGaAs Quantum Dots [Invited]

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Ultrafast Carrier Capture and Relaxation in InGaAs Self-Organized Quantum Dots

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Coherent Versus Incoherent Light Scattering from a Quantum Dot

Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Experimental research on carrier redistribution in InAs/GaAs quantum dots

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Non-thermal Emission from InGaAs Quantum Dots in a Microcavity: A Novel Cavity-Bottleneck Effect

Exciton dynamics in self-organized InAs/GaAs quantum dots

Photoluminescence Intermittency of Ingaas/Gaas Quantum Dots Confined in A Planar Microcavity

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Time-resolved Photoluminescence of Sub-Monolayer InGaAs/GaAs Quantum-Dot-quantum-well Heterostructures

Carrier-Carrier Correlations in an Optically Excited Single Semiconductor Quantum Dot

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Photoluminescence of a single InAs quantum dot molecule under applied electric field

Dynamics of excitons in individual InAs quantum dots revealed in four-wave mixing spectroscopy