In-Situ Self-Encapsulated Flexible Multi-Layered Poly (imide Siloxane) Copolymer Film with Resistance to Atomic Oxygen
Liaoliao Li,Changwei Liu,Chunyan Qu,Shuai Zheng,Dezhi Wang,Jiaying Chang,Daoxiang Zhao,Yao Tang,Xupeng Fan,Zhongliang Liu,Wanbao Xiao,Haidong Yang
DOI: https://doi.org/10.1016/j.mtcomm.2020.100959
IF: 3.8
2020-01-01
Materials Today Communications
Abstract:Silvered polyimide films, synthesized by an in-situ self-assembly method, find many applications in the fields of electronics and aerospace materials. In this work, polyimide/siloxanes were introduced into silvered PI films by an in-situ self-assembly process, which were resistant to atomic oxygen. Their atomic oxygen (AO) resistance behaviors were studied, wherein the mass loss of 20% Si-poly(amide acid salt) PAAS film was 30 ug cm(-2) after exposure to AO fluence of 1.33 x 10(20) O (10.5 h) and 190 ug cm(-2) even after 42 h. Additionally, the volume resistivity value of the flexible PI/Ag composite film was 9.9 Omega cm(-1) after 260 cycles of bending. The peel strength of PI/Ag/PI composite film was seven times more than that of the coated one (0.7 N cm(-1) to 0.1 N cm(-1)). Moreover, (Dynamic Mechanical Analysis) DMA and (Thermogravimetric Analysis) TGA data also show that the introduction of self-encapsulating PAAS can not only increase the interlayer strength but maintain the performance of PI film. X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy were also employed to test the relative AO resistance behaviors. Thus, the silvered poly(siloxane amic acid) Si-PI composite films have AO resistance, high peel strength and alternating conductivity/insulative effect, and hence can serve as a flexible printed circuit board for potential applications in low earth orbit.