Abstract:II-VI semiconductor heterojunctions show huge potential for application in nanodevice fabrication due to their type-II alignments owing to the better spatial separation of electrons and holes. However, the hetero-epitaxial growth of high-quality heterostructures is still a challenge, especially for materials with large lattice mismatch. In this work, well-aligned single-crystalline ZnO/ZnS core/shell nanorod arrays were obtained by introducing an Al2O3 buffer layer. It is interesting that the nature of the ZnS layer varies with the thickness of the Al2O3 layer. When Al2O3 is less than 2 nm, the interaction between the substrate and epilayer is strong enough to penetrate through the buffer layer, enabling the growth of ZnS on Al2O3-coated ZnO nanorod arrays. On the basis of detailed characterization, a rational growth mechanism of the core/shell heterostructure is proposed, in which the Al2O3 interlayer can eliminate voids due to the Kirkendall effect around the interface and accommodate a misfit dislocation between the inner ZnO and outer ZnS, resulting in more sufficient strain relaxation in the epitaxy. In addition, cathodoluminescence measurements demonstrate that the optical properties of the ZnO/ZnS heterostructure could be effectively improved by taking advantage of the thin Al2O3. The I-V curves characterized by PeakForce tunneling atomic force microscopy reveal that the heterostructure shows a typical rectifying behavior and good photoresponse to ultraviolet light. These findings may provide a reasonable and effective strategy for the growth of highly lattice-mismatched heterostructure arrays buffered by the Al2O3 layer, broadening the options for fabricating heterojunctions and promoting their applications in optoelectronic devices.

Vertically aligned Zn2SiO4 nanotube/ZnO nanowire heterojunction arrays.

Conversion of large-scale oriented ZnO rod array into nanotube array under hydrothermal etching condition via one-step synthesis approach

ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation.

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Arrays of ZnO Nanowires Fabricated by a Simple Chemical Solution Route

Controllable Assembly of Aligned ZnO Nanowires/belts Arrays.

A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

A General Approach for Fabricating Arc‐Shaped Composite Nanowire Arrays by Pulsed Laser Deposition

Electrochemical Synthesis of Metal and Semimetal Nanotube-Nanowire Heterojunctions and Their Electronic Transport Properties.

Arrays of Heterojunctions of Ag Nanowires and Amorphous Carbon Nanotubes

ZnO-NWs/metallic glass nanotube hybrid arrays: Fabrication and material characterization

From Gan to Znga2o4 Through A Low-Temperature Process: Nanotube and Heterostructure Arrays

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

Highly Uv Luminescent Zno Microtetrapod-On-Nanowire Hybrids

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Synthesis and Electrical Properties of ZnO Nanowires

ZnS/Zn2SnO4 Biaxial Nanowire Heterostructures

Synthesis and electrical properties of ZnO nanowires.

Al2O3 buffer-facilitated epitaxial growth of high-quality ZnO/ZnS core/shell nanorod arrays

Arrays of One-Dimensional Metal/Silicon and Metal/Carbon Nanotube Heterojunctions

Synthesis and characterization of vertically oriented hybrid Zn2GeO4-ZnO beaded nanowire arrays and Zn2GeO4 nanotubes