OPTICAL AND ELECTRICAL PROPERTIES OF La2O3 FILMS PREPARED BY ION BEAM ASSISTANT ELECTRON BEAM EVAPORATION

CHEN YANG,HUIQING FAN,SHAOJUN QIU,YINGXUE XI,YUNFEI FU
DOI: https://doi.org/10.1142/S0218625X08011354
2008-01-01
Surface Review and Letters
Abstract:La2O3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450-900 degrees C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600 degrees C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10(-7) to 10(-4)A/cm(2) with the rise in annealing temperature. The film annealed at 600 degrees C with cubic structure had a relatively high dielectric constant of similar to 18.
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